器件名称: STE30NK90Z
功能描述: N-CHANNEL 900V - 0.21
文件大小: 228.4KB 共10页
简 介:N-CHANNEL 900V - 0.21 - 28A ISOTOP Zener-Protected SuperMESH MOSFET
Table 1: General Features
TYPE STE30NK90Z
s s s s
STE30NK90Z
Figure 1: Package
ID 28 A Pw 500 W
VDSS 900 V
RDS(on) < 0.26
TYPICAL RDS(on) = 0.21 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED
DESCRIPTION The SuperMESH series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh products. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s IDEAL FOR WELDING EQUIPMENT
s
ISOTOP
Figure 2: Internal Schematic Diagram
Table 2: Order Codes
SALES TYPE STE30NK90Z MARKING E30NK90Z PACKAGE ISOTOP PACKAGING TUBE
Rev.3 January 2005 1/10
STE30NK90Z
Table 3: Absolute Maximum ratings
Symbol VDS VDGR VGS ID ID IDM ( ) PTOT VESD(G-S) dv/dt (1) VISO Tj Tstg Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Gate source ESD(HBM-C=100pF, R=1.5K) Peak Diode Recovery voltage slope Insulation Withstand Voltage (AC-RMS) from All Four Terminals to External Heatsink Operating Junction Temperature Storage Temperature Va……
