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STE70NM60

器件名称: STE70NM60
功能描述: N-CHANNEL 600V - 0.050W - 70A ISOTOP Zener-Protected MDmesh Power MOSFET
文件大小: 311.84KB    共8页
生产厂商: STMICROELECTRONICS
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简  介:STE70NM60 N-CHANNEL 600V - 0.050 - 70A ISOTOP Zener-Protected MDmeshPower MOSFET TYPE STE70NM60 VDSS 600V RDS(on) < 0.055 ID 70 A TYPICAL RDS(on) = 0.050 HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD CAPABILITY LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE TIGHT PROCESS CONTROL INDUSTRY’S LOWEST ON-RESISTANCE DESCRIPTION The MDmesh is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products. APPLICATIONS The MDmesh family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies. ISOTOP INTERNAL SCHEMATIC DIAGRAM ORDERING INFORMATION SALES TYPE STE70NM60 MARKING E70NM60 PACKAGE ISOTOP PACKAGING TUBE March 2003 1/8 STE70NM60 ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM ( ) PTOT VESD(G-S) dv/dt (1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Gate source ESD(HBM-C=100pF, R=15K) Derating Factor Peak Diode Recovery voltage sl……
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STE70NM60 N-CHANNEL 600V - 0.050W - 70A ISOTOP Zener-Protected MDmesh Power MOSFET STMICROELECTRONICS
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