器件名称: STP12NK80Z
功能描述: N-CHANNEL 800V - 0.65 OHM - 10.5A TO-220 / D2PAK / TO-247 Zener-Protected SuperMESH Power MOSFET
文件大小: 342.58KB 共15页
简 介:STB12NK80Z STP12NK80Z - STW12NK80Z
N-CHANNEL 800V - 0.65 - 10.5A - TO220-DPAK-TO247 Zener-Protected SuperMESH MOSFET
General features
Type STB12NK80Z STP12NK80Z STW12NK80Z
s s s s s s
Package
RDS(on) ID 10.5 A 10.5 A 10.5 A Pw 190 W 190 W 190 W
3 1 2
1 2 3
VDSS
800 V <0.75 800 V <0.75 800 V <0.75
EXTREMELY HIGH dv/dt CAPABILITY IMPROVED ESD CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEABILITY
TO-220
1
3
TO-247
DPAK
Internal schematic diagram
Description
The SuperMESH series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.
Applications
s s
HIGH CURRENT, HIGH SPEED SWITCHING IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTOR AND PFC
Order codes
Sales Type STB12NK80ZT4 STP12NK80Z STW12NK80Z Marking B12NK80Z P12NK80Z W12NK80Z Package DPAK TO-220 TO-247 Packaging TAPE & REEL TUBE TUBE
September 2005
Rev 2 1/15
www.st.com 15
1 Electrical ratings
STB12NK80Z - STP12NK80Z - STW12NK80Z
1
Table 1.
Electrical ratings
Absolute maximum ratings
Parameter Drain-Source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20k) Gate-Source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Value 800 800 ± 30 10.5……
