器件名称: AH212
功能描述: 1 Watt High Linearity, High Gain InGaP HBT Amplifier
文件大小: 656.59KB 共12页
简 介:AH212
Product Features
1800 – 2400 MHz 26 dB Gain +30 dBm P1dB +46 dBm Output IP3 +5V Single Positive Supply Internal Active Bias
The Communications Edge TM Product Information
1 Watt High Linearity, High Gain InGaP HBT Amplifier
Product Description
The AH212 is a high dynamic range two-stage driver amplifier in a low-cost surface mount package. The InGaP/GaAs HBT is able to achieve superior performance for various narrowband-tuned application circuits with up to +46 dBm OIP3 and +30 dBm of compressed 1-dB power. The amplifier is available in an industry-standard SMT lead-free/green/RoHS-compliant SOIC-8 or 4x5mm DFN package. All devices are 100% RF and DC tested.
Functional Diagram
Vcc1 1 8 N/C Vbias1 2 7 Vcc2 / RF Out 6 Vcc2 / RF Out
RF In 3
Vbias2 4
5 N/C
AH212-S8G
Vbias1 1 N/C 2 RF In 3 N/C 4 N/C 5 Vbias2 6 12 Vcc1 11 N/C 10 Vcc2 / RF Out 9 Vcc2 / RF Out 8 N/C 7 N/C
Lead-free/green/RoHS-compliant The product is targeted for use as linear driver amplifier for SOIC-8 & 4x5mm DFN Package various current and next generation wireless technologies
Applications
Mobile Infrastructure WiBro Infrastructure TD-SCDMA
such as GPRS, GSM, CDMA, W-CDMA, TD-SCDMA, and WiBro, where high linearity and high power is required. The internal active bias allows the AH212 to maintain high linearity over temperature and operate directly off a +5 V supply.
AH212-EG
Specifications (1)
Parameters
Operational Bandwidth Test Frequency Gain Input Return Loss Output Return Loss Out……
