器件名称: TQPHT
功能描述: 0.5 um pHEMT Foundry Service
文件大小: 208.55KB 共5页
简 介:Production Process
TQPHT
0.5 um pHEMT Foundry Service
Features
Metal 2 Dielectric Metal 1 Dielectric
MIM Metal
Metal 2 - 4um Dielectric Metal 1 - 2um
Metal 1
NiCr Isolation Implant Isolation Implant
Nitride N+ Pseudomorphic Channel
Metal 0
pHEMT
MIM Capacitor Semi-Insulating GaAs Substrate
NiCr Resistor
0.5 um pHEMT Device Cross-Section
D-Mode, -0.8 V Vp InGaAs Active Layer pHEMT Process 0.5 um Optical Lithography Gates 17 V D-G Breakdown Voltage High Density Interconnects: 2 Global 1 Local High-Q Passives Thin Film Resistors High Value Capacitors Backside Vias Optional Based on Production 0.25 m pHEMT and Passives Processes TOM3 FET Models Available
General Description
TriQuint’s 0.5 m pHEMT process is based on our production released 0.25 m gate process. TQPHT substitutes lower cost optical lithography in place of e-beam and adds TriQuint’s unique thick metal scheme. This process is targeted for high efficiency and linearity in power amplifiers, low noise amplifiers, and linear, low loss and high isolation RF switch applications. The TQPHT process offers a D-Mode pHEMT with a –0.8 V pinch off. The three metal interconnecting layers are encapsulated in a high performance dielectric that allows wiring flexibility, optimized die size and plastic packaging simplicity. Precision NiCr resistors and high value MIM capacitors are included allowing higher levels of integration, while maintaining smaller, cost –effective die sizes.
Applications
Highl……
