器件名称: 1SS106
功能描述: Silicon Schottky Barrier Diode for Various Detector, High Speed Switching
文件大小: 63.04KB 共15页
简 介:1SS106
Silicon Schottky Barrier Diode for Various Detector, High Speed Switching
REJ03G0125-0200Z (Previous: ADE-208-153A) Rev.2.00 Oct.23.2003
Features
Detection efficiency is very good. Small temperature coefficient. High reliability with glass seal..
Ordering Information
Type No. 1SS106 Cathode White 2nd band White Mark H Package Code DO-35
Pin Arrangement
H
1 2nd band Cathode band
2
1. Cathode 2. Anode
Rev.2.00, Oct.23.2003, page 1 of 4
1SS106
Absolute Maximum Ratings
(Ta = 25°C)
Item Reverse voltage Average rectified current Junction temperature Storage temperature Symbol VR IO Tj Tstg Value 10 30 125 –55 to +125 Unit V mA °C °C
Electrical Characteristics
(Ta = 25°C)
Item Forward current Reverse current Capacitance ESD-Capability Note:
*1
Symbol IF IR C —
Min 4.5 — — 100
Typ — — — —
Max — 70 1.5 —
Unit mA A pF V
Test Condition VF = 1 V VR = 6 V VR = 1 V, f = 1 MHz C = 200 pF, Both forward and reverse direction 1 pulse.
1. Failure criterion; IR ≥ 140 A at VR = 6 V
Rev.2.00, Oct.23.2003, page 2 of 4
1SS106
Main Characteristics
10–1 10–2
10–3
Reverse current IR (A)
Forward current IF (A)
10–2
10–3
10–4
10–4
10–5
10–5
0
0.4
0.8
1.2
1.6
2.0
10–6
0
2
4
6
8
10
Forward voltage VF (V) Fig.1 Forward current vs. Forward voltage
Reverse voltage VR (V) Fig.2 Reverse current vs. Reverse voltage
f = 1MHz
10
Capacitance C (pF)
1.0
0.1 0.1
1.0 Reverse voltage VR (V)
10
Fig.2 Capacitance vs. Reverse voltage
Rev.2.00, Oct.23.2003, p……
