器件名称: 1SS108
功能描述: Silicon Schottky Barrier Diode for Various Detector, High Speed Switching
文件大小: 17.76KB 共5页
简 介:1SS108
Silicon Schottky Barrier Diode for Various Detector, High Speed Switching
ADE-208-154A (Z) Rev. 1 Features
Detection efficiency is very good. Small temperature coefficient. High reliability with glass seal.
Ordering Information
Type No. 1SS108 Cathode White 2nd band Black Mark H Package Code DO-35
Outline
H
1 2nd band Cathode band
2
1. Cathode 2. Anode
1SS108
Absolute Maximum Ratings (Ta = 25°C)
Item Reverse voltage Average rectified current Junction temperature Storage temperature Symbol VR IO Tj Tstg Value 30 15 125 –55 to +125 Unit V mA °C °C
Electrical Characteristics (Ta = 25°C)
Item Forward current Reverse current Capacitance Rectifier efficiency ESD-Capability Symbol IF IR C η — Min 3.0 — — 70 70 Typ — — — — — Max — 100 3.0 — — Unit mA A pF % V Test Condition VF = 1V VR = 10V VR = 1V, f = 1MHz Vin = 2Vrms, f = 40MHz, RL = 5k , CL = 20pF *C = 200pF, Both forward and reverse direction 1 pulse.
Note: Failure criterion; I R ≥ 200A at VR = 10V
10
–1
Forward current I F (A)
10
–2
10
–3
10
–4
10
–5
10
–6
0
1.2 1.6 0.4 0.8 Forward voltage VF (V)
2.0
Fig.1 Forward current Vs. Forward voltage
1SS108
10
–2
Reverse current I R (A)
10
–3
10–4
10
–5
10
–6
0
5
10 15 20 25 Reverse voltage VR (V)
30
Fig.2 Reverse current Vs. Reverse voltage
f = 1MHz
10 Capacitance C (pF)
1.0
10
–1
10 –1
1.0 Reverse voltage VR (V)
10
Fig.3 Capacitance Vs. Reverse voltage
1SS108
100
80 Rectifier efficiency η (%)
60
40
20
0 0 0.5 1.0 1.5……