器件名称: 1SS277
功能描述: Silicon Epitaxial Planar Diode for UHF/VHF tuner Band Switch
文件大小: 23.23KB 共5页
简 介:1SS277
Silicon Epitaxial Planar Diode for UHF/VHF tuner Band Switch
ADE-208-301A(Z) Rev 1 March 1996 Features
Low forward resistance. (rf = 0.5 max) Ultra small glass package (UMD) enables easy mounting and high reliability.
Ordering Information
Type No. 1SS277 Cathode band Verdure 2nd band Blue Package Code UMD
Outline
1
2 2nd band Cathode band 1. Cathode 2. Anode
1SS277
Absolute Maximum Ratings (Ta = 25°C)
Item Reverse voltage Forward current Power dissipation Operation temperature Storage temperature Symbol VR IF Pd Topr Tstg Value 35 100 100 -20`+60 -55`+150 Unit V mA mW °C °C
Electrical Characteristics (Ta = 25°C)
Item Reverse voltage Forward voltage Reverse current Capacitance Forward resistance Symbol VR VF IR C rf Min 35 Typ Max Unit V V nA pF Test Condition IR = 10A IF = 10 mA VR = 25V VR = 6V, f = 1 MHz IF = 2 mA, f = 100 MHz
\ \ \ \ \
\
1.0 10 1.2 0.5
\ \ \ \
1SS277
Main Characteristic
10
-2
10 -9
10
Forward current I F (A)
-4
10
-6
Reverse current I R (A)
10
-10
10
-11
10
-8
10
-10
10
-12
10
-12
10 0 0.2 0.4 0.6 0.8 1.0 Forward voltage VF (V)
-13
0
40 20 30 10 Reverse voltage VR (V)
50
Fig.1 Forward current Vs. Forward voltage
Fig.2 Reverse current Vs. Reverse voltage
10 f=1MHz
10
2
f=100MHz
Forward resistance r f ()
Capacitance C (pF)
10
1.0
1.0
10
-1
10
-1
10 10 Reverse voltage VR (V) Fig.3 Capacitance Vs. Reverse voltage 40
-2
1.0
10
-4
10-3
10-2
10
-1
Forward current I F (A) Fig.4 Forward resista……
