器件名称: 2N2218A
功能描述: SILICON PLANAR EPITAXIAL TRANSISTORS
文件大小: 209.45KB 共3页
简 介:NPN 2N2218A – 2N2219A SILICON PLANAR EPITAXIAL TRANSISTORS
The 2N2218A and 2N2219A are NPN transistors mounted in TO-39 metal case . They are designed for high-speed switching applications, And feature useful current gain over a wide range of collector current, low leakage currents and low saturation voltages. Compliance to RoHS
ABSOLUTE MAXIMUM RATINGS Symbol
VCEO VCBO VEBO IC PD PD TJ TStg
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Total Power Dissipation Junction Temperature Storage Temperature range @ Tamb = 25° @ Tcase= 25°
Ratings
2N2218A 2N2219A 2N2218A 2N2219A 2N2218A 2N2219A 2N2218A 2N2219A 2N2218A 2N2219A 2N2218A 2N2219A 2N2218A 2N2219A 2N2218A 2N2219A
Value
40 75 6 800 0.8 3 175 -65 to +200
Unit
V V V mA Watts Watts °C °C
THERMAL CHARACTERISTICS Symbol
RthJ-a RthJ-c
Ratings
Thermal Resistance, Junction to ambient in free air Thermal Resistance, Junction to case 2N2218A 2N2219A 2N2218A 2N2219A
Value
50 187.5
Unit
°C/W °C/W
COMSET SEMICONDUCTORS
1/3
NPN 2N2218A – 2N2219A
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
ICBO ICBO IEBO ICEX VCEO (1) VCBO VEBO
Ratings
Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current Collector Cutoff Current
Test Condition(s)
VCB=60 V, IE=0 VCB=60 V, IE=0, Tj=150°C VBE=3.0 V, IC=0 VCE=60 V, -VBE=3V
Min Typ Mx Unit
10 10 10 10 120 300 0.3 1 V 1.2 2 nA A nA nA V V V
Collector Emitter Breakdown IC=10 mA, IB=0 Voltage……
