器件名称: 2N3020
功能描述: SILICON PLANAR EPITAXIAL TRANSISTORS
文件大小: 176.85KB 共3页
简 介:NPN 2N3019 – 2N3020 SILICON PLANAR EPITAXIAL TRANSISTORS
The 2N3019 and 2N3020 are NPN transistors mounted in TO-39 metal case . They are intended for high-current, high-frequency amplifier applications. They feature high gain and low saturation voltages. Compliance to RoHS
ABSOLUTE MAXIMUM RATINGS Symbol
VCEO VCBO VEBO IC PD PD TJ TStg
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Total Power Dissipation Junction Temperature Storage Temperature range @ Tamb = 25° @ Tcase= 25°
Ratings
2N3019 2N3020 2N3019 2N3020 2N3019 2N3020 2N3019 2N3020 2N3019 2N3020 2N3019 2N3020 2N3019 2N3020 2N3019 2N3020
Value
80 140 7 1 0.8
Unit
V V V A Watts
5 200 -65 to +200 °C °C
THERMAL CHARACTERISTICS Symbol
RthJ-a RthJ-c
Ratings
Thermal Resistance, Junction to ambient in free air Thermal Resistance, Junction to case 2N3019 2N3020 2N3019 2N3020
Value
35 219
Unit
°C/W °C/W
COMSET SEMICONDUCTORS
1/3
NPN 2N3019 – 2N3020
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
ICBO IEBO VCEO VCBO VEBO
Ratings
Collector Cutoff Current
Test Condition(s)
VCB =950 V, IE =0 VCB =90 V, IE =0, Tj =150°C
Min Typ Mx Unit
80 140 7 50 30 90 40 100 40 50 30 15 40 100 80 80 30 10 10 10 100 120 300 120 100 0.2 0.5 1.1 400 200 4 12 60 400 MHz dB pF pF ps V nA A nA V V V
Emitter Cutoff Current
VEB =5 V, IC =0
Collector Emitter Breakdown IC =10 mA, IB =0 Voltage Collector Base Breakdown IC =100 A, IE =0 Voltage Emitter Base ……
