器件名称: AM1320N
功能描述: N-Channel 20V (D-S) MOSFET
文件大小: 192.49KB 共4页
简 介:Analog Power N-Channel 20V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Low rDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe SC70-3 saves board space Fast switching speed High performance trench technology
AM1320N
PRO DUCT SUM M A RY V ) rDS(on) () DS (V 0.058 @ V G S = 4.5 V 20 0.082 @ V G S = 2.5V
ID (A ) 2.0 1.7
G D S
ABSOLUTE MAX IMUM RATING S (TA = 25 C UNLESS OTHERW ISE NOTED) Sym bol Maxim um Units Param eter 20 Drain-Source Voltage VDS V VGS ±8 G ate-Source Voltage Continuous Drain Current Pulsed Drain Current
b a a
o
TA=25 C TA=70 C
o
o
ID IDM IS
2.0 1.7 ±20 1.6 0.34 0.22 A W
o
A
Continuous Source Current (Diode Conduction) Power Dissipation
a
TA=25 C TA=70 C
o
o
PD
Operating Junction and Storage Tem perature Range
TJ, Tstg -55 to 150
C
THERMAL RESISTANCE RATINGS Parameter
Maximum Junction-to-Ambient
a
Symbol Maximum Units
RTHJA 100 166
o
t <= 5 sec Steady-State
C/W
Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature
1 PRELIMINARY
Publication Order Number: DS-AM1320_A
Analog Power
AM1320N
SPECIFICATIONS (T A = 25oC UNLESS OTHERWISE NO……
