器件名称: ACE3400BM+H
功能描述: N-Channel Enhancement Mode MOSFET
文件大小: 262.56KB 共7页
简 介:ACE3400
Technology
Description
The ACE3400 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package.
N-Channel Enhancement Mode MOSFET
Features
30V/5.4A, RDS(ON)=38mΩ@VGS=10V 30V/4.6A, RDS(ON)=42mΩ@VGS=4.5V 30V/3.8A, RDS(ON)=55mΩ@VGS=2.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-23-3L package design
Application
Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load Switch DSC LCD Display inverter
Absolute Maximum Ratings
Symbol Max Unit VDSS 30 V VGSS ±20 V TA=25℃ 4.5 Continuous Drain Current (TJ=150℃) A ID TA=70℃ 3.5 Pulsed Drain Current IDM 25 A Continuous Source Current (Diode Conduction) IS 1.7 A TA=25℃ 2.0 Power Dissipation W PD TA=70℃ 1.3 O Operating Junction Temperature TJ 150 C O Storage Temperature Range TSTG -55/150 C Thermal Resistance-Junction to Ambient RθJA 90 OC/W Parameter Drain-Source Voltage Gate-Source Voltage
VER 1.2
1
ACE3400
Technology
Packaging Type
SOT-23-3
3
N-Channel Enhancement Mode MOSFET
Pin Symbol Descriptio……
