器件名称: ACE7401
功能描述: P-Channel Enhancement Mode MOSFET
文件大小: 326.69KB 共7页
简 介:
ACE7401
Technology Description
P-Channel Enhancement Mode MOSFET
The ACE7401 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other batter powered circuits, and low in-line power loss are needed in a very small outline surface mount package.
Features
-30V/-2.8A, RDS(ON)=115mΩ@VGS=-10V -30V/-2.5A, RDS(ON)=125mΩ@VGS=-4.5V -30V/-1.5A, RDS(ON)=170mΩ@VGS=-2.5V -30V/-1.0A, RDS(ON)=240mΩ@VGS=-1.8V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability
Application
Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load Switch DSC LCD Display inverter
Absolute Maximum Ratings
Symbol Max Unit VDSS -30 V VGSS ±12 V TA=25℃ -2.8 Continuous Drain Current (TJ=150℃) A ID TA=70℃ -2.1 Pulsed Drain Current IDM -8 A Continuous Source Current (Diode Conduction) IS -1.4 A TA=25℃ 0.33 Power Dissipation W PD TA=70℃ 0.21 Operating Junction Temperature TJ -55/150 OC Storage Temperature Range TSTG -55/150 OC Thermal Resistance-Junction to Ambient RθJA 105 OC/W Parameter Drain-Source Voltage Gate-Source Voltage
VER 1.2
1
ACE7401
Technolo……
