器件名称: BY133-T3
功能描述: 1.0A SILICON RECTIFIER
文件大小: 47.37KB 共3页
简 介:W TE
PO WE R SEM IC O ND U C TO RS
BY133
1.0A SILICON RECTIFIER
Features
! ! ! ! ! Diffused Junction Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A
Mechanical Data
! ! ! ! ! ! Case: Molded Plastic Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 Polarity: Cathode Band Weight: 0.35 grams (approx.) Mounting Position: Any Marking: Type Number D
DO-41 Dim Min Max A 25.4 — B 4.06 5.21 C 0.71 0.864 D 2.00 2.72 All Dimensions in mm
C
Maximum Ratings and Electrical Characteristics
Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
@TA=25°C unless otherwise specified
Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current (Note 1) @TA = 75°C
Symbol VRRM VRWM VR VR(RMS) IO IFSM VFM IRM Cj RJA Tj TSTG
BY133
Unit
1300 910 1.0 30 1.0 5.0 50 15 50 -65 to +125 -65 to +150
V V A A V A pF K/W °C °C
Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) Forward Voltage Peak Reverse Current At Rated DC Blocking Voltage Typical Junction Capacitance (Note 2) Typical Thermal Resistance Junction to Ambient (Note 1) Operating Temperature Range Storage Temperature Range @IF = 1.0A @TA = 25°C @TA = 100°C
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case 2. Measured at 1.0 MHz and Appli……
