器件名称: C1210
功能描述: Process C1210 CMOS 1.2mm Zero Threshold Devices
文件大小: 35.03KB 共4页
简 介: ISO 9001 Registered
Process C1210
CMOS 1.2 m Zero Threshold Devices
Electrical Characteristics
N-Channel Transistor Threshold Voltage Body Factor Conduction Factor Effective Channel Length Width Encroachment Punch Through Voltage Poly Field Threshold Voltage Zero Vt N-Channel Transis. Threshold Voltage Body Factor Conduction Factor Saturation Current Symbol VTN γN βN LeffN WN BVDSSN VTFP(N) Symbol VTZLN γZLN βZLN IDSATZN Minimum 0.55 64 0.8 9 10 Minimum 0.00 75 28 Typical 0.15 0.348 90 34 Typical 0.75 0.34 75 1.0 0.6
T=25oC Unless otherwise noted Maximum Unit Comments 0.95 V 100x1.2m V1/2 100x1.2m 86 A/V2 100x100m 1.2 m 100x1.2m m Per side V V
Maximum 0.30 105 40 Unit V V1/2 A/V2 mA Comments 100x100m 100x100m 100x100m 100x1.5m
P-Channel Transistor Threshold Voltage Body Factor Conduction Factor Effective Channel Length Width Encroachment Punch Through Voltage Poly Field Threshold Voltage
Symbol VTP γP βP LeffP WP BVDSSP VTFP(P)
Minimum –0.7 21 0.9 –9.0 –10.0
Typical –0.9 0.38 25 1.1 0.8
Maximum –1.1 29 1.3
Unit V V1/2 A/V2 m m V V
Comments 100x1.2m 100x1.2m 100x100m 100x1.2m Per side
Zero Vt P-Channel Transis. Threshold Voltage Body Factor Conduction Factor Saturation Current
Symbol VTZLP γZLP βZLP IDSATZP
Minimum –0.3 21 –11
Typical –0.1 0.36 26 –15
Maximum 0.1 31 –19
Unit V V1/2 A/V2 mA
Comments 100x100m 100x100m 100x100m 100x1.5m
IMP, Inc.
47
Process C1210
Electrical Characteristics
Diffusion & Thin Films Well (field) Sheet Resistance N+ Sheet Resist……
