器件名称: C1226
功能描述: CMOS 1.2um 100V CMOS, Double Metal - Double Poly
文件大小: 42.8KB 共2页
简 介: ISO 9001 Registered
Process C1226
CMOS 1.2 m 100V CMOS, Double Metal - Double Poly
Electrical Characteristics
T = 25oC Unless otherwise noted
Symbol N-Channel High Voltage Transistor Threshold Voltage HVTN Punch Through Voltage HVBVDSSN ON Resistance HVPR0N Operating Voltage N-Channel Low Voltage Transistor Threshold Voltage VTN Body Factor γN Conduction Factor βN Effective Channel Length LeffN Width Encroachment WN Punch Through Voltage BVDSSN Poly Field Threshold Voltage VTFPN Symbol P-Channel High Voltage Transistor Threshold Voltage HVTP Punch Through Voltage HVBVDSSP ON Resistance HVPR0N Operating Voltage P-Channel Low Voltage Transistor Threshold Voltage VTP Body Factor γP Conduction Factor βP Effective Channel Length LeffP Width Encroachment WP BVDSSP Punch Through Voltage Poly Field Threshold Voltage VTFP(P)
Minimum 0.70 120 550
Typical 0.90 700 VGS = 5V VDS = 100V 0.45 0.475 78 1.35 0.4 12 15 Typical –0.90 2500 VGS = 5V VDS = 100V –0.45 0.6 25 1.5 0.4 –12 –12
Maximum 1.10 850
Unit V V
Comments
W/L = 147/5
0.30 64
0.65 92
5 8 Minimum –0.70 –120 2000
V V1/2 A/V 2 m m V V Unit V V V
100x1.5m 100x1.5m 100x100m 100x1.5m Per side
Maximum –1.10 3000
Comments
W/L = 139/5
-0.65 20
–0.30 30
–5 –8
V V1/2 A/V 2 m m V V
100x1.5m 100x1.5m 100x100m 100x1.5m Per side
2001 IMP, Inc.
69
Process C1226
Physical Characteristics
Diffusion & Thin Films Symbol Starting Material p<100> Well (field) Sheet Resistance ρN-well(f) ρN+ N+ Sheet Resistance N+ Junction D……
