器件名称: 1A3
功能描述: TECHNICAL SPECIFICATIONS OF SILICON RECTIFIER
文件大小: 39.91KB 共1页
简 介:CHONGQING PINGYANG ELECTRONICS CO.,LTD.
1A1 THRU 1A7
TECHNICAL SPECIFICATIONS OF SILICON RECTIFIER
VOLTAGE：50-1000V CURRENT：1.0A
FEATURES
High reliability Low leakage Low forward voltage drop High current capability
R-1
.025(0.65) DIA. .021(0.55)
.787(20.0) MIN. .138(3.5) .114(2.9)
MECHANICAL DATA
Case: Molded plastic Epoxy: UL94V-0 rate flame retardant Lead: MIL-STD- 202E, Method 208 guaranteed Polarity:Color band denotes cathode end Mounting position: Any Weight: 0.19 grams
.787(20.0) MIN.
.102(2.6) DIA. .087(2.2)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRONICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified. Single phase, half wave, 60Hz,resistive or inductive load. For capacitive load, derate current by 20%.
SYMBOL
1A1
1A2
1A3 200 140 200
1A4
1A5
1A6 800 560 800
1A7 units 1000 700 1000 V V V A
Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward rectified Current at TA=25°C Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rate load (JEDEC method) Maximum Instantaneous forward Voltage at 1.0A DC @ TA=25°C Maximum DC Reverse Current at Rated DC Blocking Voltage @ TA=100°C Maximum Full Load Reverse Current Average Full Cycle .375”(9.5mm) lead length at TL=75°C Typical Junction Capacitance (Note) Typical Thermal Resistance Notes:
VRRM VRMS VDC Io
50 35 50
100 70 100
400 280 400 1.0
600 420 600
IFSM VF
25 1.1 5.0
A V
IR……
