器件名称: W13NK100Z
功能描述: N-channel 1000V - 0.56
文件大小: 319.32KB 共14页
简 介:STW11NK100Z STW13NK100Z
N-channel 1000V - 0.56 - 13A - TO-247 Zener - Protected SuperMESH PowerMOSFET
General features
Type STW13NK100Z
■ ■ ■ ■ ■
VDSS (@Tjmax) 1000 V
RDS(on)
ID
PW
< 0.70 13 A 350W
Extremely high dv/dt capability 100% avalanche tested Gate charge minimized Very low intrinsic capacitances Very good manufacturing repeatibility
TO-247
Description
The SuperMESH series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh products.
Internal schematic diagram
Applications
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Switching application
Order codes
Part number STW13NK100Z Marking W13NK100Z Package TO-247 Packaging Tube
August 2006
Rev 5
1/14
www.st.com 14
Contents
STW13NK100Z
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.1 Protection features of gate-to-source zener diodes . . . . . . . . . . . . . . . . . . 4
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2.1 Electrical characteristics (curves) ............................ 7
3 4 5
Test circuit
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Package mechanical data……
