器件名称: XX1005-BD-000V
功能描述: 8.0-12.0/16.0-24.0 GHz GaAs MMIC Active Doubler
文件大小: 218.07KB 共6页
简 介:8.0-12.0/16.0-24.0 GHz GaAs MMIC Active Doubler
January 2007 - Rev 17-Jan-07
X1005-BD Chip Device Layout
XX1005-BD
Features
Excellent Mixer Driver 2-Stage Active Design Can be Used to Drive XR1002 Receiver +16 dBm Output Drive 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010
General Description
Mimix Broadband’s two stage 8.0-12.0/16.0-24.0 GHz GaAs MMIC doubler has a +16.0 dBm output drive and is an excellent LO doubler that can be used to drive fundamental mixer devices. It is also well suited to drive Mimix's XR1002 receiver device. This MMIC uses Mimix Broadband’s 0.15 m GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.
Absolute Maximum Ratings
Supply Voltage (Vd) Supply Current (Id) Gate Bias Voltage (Vg) Input Power (RF Pin) Storage Temperature (Tstg) Operating Temperature (Ta) Channel Temperature (Tch)
+6.0 VDC 195 mA +0.3 VDC TBD -65 to +165 OC -55 to MTTF Table1 MTTF Table 1
(1) Channel temperature affects a device's MTBF. It is recommended to keep channel temperature as low as possible for maximum life.
Electrical Characteristics (Ambient Temperature……
