器件名称: XX1007-BD
功能描述: 13.5-17.0/27.0-34.0 GHz GaAs MMIC Active Doubler
文件大小: 377.15KB 共6页
简 介:13.5-17.0/27.0-34.0 GHz GaAs MMIC Active Doubler
February 2008 - Rev 13-Feb-08
X1007-BD Functional Block Diagram
Vd
Features
Integrated Gain, Doubler and Driver Stages Self-biased Architecture +21.0 dBm Output Saturated Power 40.0 dBc Fundamental Suppression On-Chip ESD Protection 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010
RF IN
X2
RF OUT
General Description
Mimix Broadband’s 13.5-17.0 / 27.0-34.0 GHz GaAs MMIC doubler integrates a gain stage, passive doubler and driver amplifier onto a single device. The XX1007-BD has a self-biased architecture requiring a single positive supply (+5V) only and integrated on-chip bypassing capacitor eliminating the need for external capacitor. This MMIC uses Mimix Broadband’s 0.15um GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has integrated ESD structures for protection and surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.
Absolute Maximum Ratings
Supply Voltage (Vd) Supply Current (Id) Gate Bias Voltage (Vg) Input Power (RF Pin) Storage Temperature (Tstg) Operating Temperature (Ta) Channel Temperature (Tch)
+6.0 VDC 300 mA +0.3 VDC TBD -65 to +165 OC -55 to MTTF Tab……
