器件名称: 2N2955
功能描述: TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
文件大小: 233.99KB 共1页
简 介:DC COMPONENTS CO., LTD.
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2N2955
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Description
Designed for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers.
TO-3
1.573 Max (39.96) .875(22.23) .759(19.28) .450(11.43) .250(6.35) .480(12.19) .440(11.18)
Pinning
1 = Base 2 = Emitter Case = Collector
.135 Max (3.43)
Absolute Maximum Ratings(TA=25oC)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Total Power Dissipation(TC=25 C) Junction Temperature Storage Temperature
o
Symbol VCBO VCEO VCEV VEBO IC IB PD TJ TSTG
Rating -100 -60 -70 -7 -15
-7
Unit V V V V A A W
o o .225(5.72) .205(5.20) .169(4.30) .151(3.84)
.043(1.09) .038(0.97) 1.197(30.40) 1.177(29.90) .681(17.30) .655(16.64) 2 .440(11.18) 1.050(26.67) .420(10.67) 1.011(25.68) 1 Case: Collector
.169(4.30) .151(3.84)
115 +200 -65 to +200
C
C
Dimensions in inches and (millimeters)
Electrical Characteristics o
Characteristic Collector-Emitter Sustaining Volatge
(Ratings at 25 C ambient temperature unless otherwise specified)
Symbol VCEO(sus) VCER(sus) ICEO Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage(1) Base-Emitter On Voltage DC Current Gain(1) Second Breakdown Collector with Base Forward Bias Current Gain - Bandwidth Product Small-Signal Current Gain Small-Signal Current Gain Cutoff Frequency (1)Pulse Test: Pulse Width 30……
