器件名称: 2N3904
功能描述: TRANSISTOR(NPN)
文件大小: 240.72KB 共4页
简 介:2N3904
TRANSISTOR(NPN)
PRODUCT SUMMARY
TO-92 Plastic-Encapsulate Transistors
TO-92
FEATURES
NPN silicon epitaxial planar transistor for switching and Amplifier applications As complementary type, the PNP transistor 2N3906 is Recommended This transistor is also available in the SOT-23 case with the type designation MMBT3904
1. EMITTER
2. BASE
3. COLLECTOR
1 2 3
MAXIMUM RATINGS (TA=25 oC unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value 60 40 6 0.2 0.625 150 -55-150 Units V V V A W ℃ ℃
03/17/2008 Rev.1.00
www.SiliconStandard.com
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2N3904
ELECTRICAL CHARACTERISTICS
(Tamb=25 C unless otherwise specified)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off Collector cut-off Emitter cut-off current current current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE1 DC current gain hFE2 hFE3 Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Delay Time Rise Time Storage Time Fall Time VCE(sat) VBE(sat) fT td tr ts tf Test conditions MIN 60 40 6 0.1 0.1 0.1 100 60 30 0.3 0.95 300 35 35 200 50 V V MHZ ns ns ns ns 400 TYP MAX UNIT V V V μA μA μA
o
IC=10μA, IE=0 IC= 1mA , IB=0 IE= 10μA, IC=0 VCB=60V, IE=0 VCE= 40V, IB=0 VEB= 5V, IC=0 VCE=1V, VCE=1V, VCE=1V, IC=10mA IC……
