器件名称: 2SA1015
功能描述: TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
文件大小: 215.16KB 共1页
简 介:DC COMPONENTS CO., LTD.
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2SA1015
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Description
Designed for use in driver stage of AF amplifier general purpose amplification.
TO-92
.190(4.83) .170(4.33) .190(4.83) .170(4.33) 2 Typ 2 Typ
o o
Pinning
1 = Emitter 2 = Collector 3 = Base
Absolute Maximum Ratings(TA=25oC)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD TJ TSTG Rating -50 -50 -5 -150 400 +150 -55 to +150 Unit V V V mA mW
o o
.500 Min (12.70) .022(0.56) .014(0.36) .100 Typ (2.54) .148(3.76) .132(3.36) .022(0.56) .014(0.36)
.050 Typ (1.27)
3 2 1
C
.050 o o 5 Typ. 5 Typ. (1.27) Typ Dimensions in inches and (millimeters)
C
Electrical Characteristics o
Characteristic
(Ratings at 25 C ambient temperature unless otherwise specified)
Symbol BVCBO BVCEO BVEBO ICBO IEBO
(1)
Min -50 -50 -5 70 25 80 2%
Typ -
Max -0.1 -0.1 -0.3 -1.1 700 7
Unit V V V A A V V MHz pF
Test Conditions IC=-100A, IE=0 IC=-1mA, IB=0 IE=-10A, IC=0 VCB=-50V, IE=0 VEB=-5V, IC=0 IC=-100mA, IB=-10mA IC=-100mA, IB=-10mA IC=-2mA, VCE=-6V IC=-150mA, VCE=-6V IC=-1mA, VCE=-10V, f=100MHz VCB=-10V, f=1MHz, IE=0
Collector-Base Breakdown Volatge Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Volatge Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage Base-Emitter Saturati……
