器件名称: 2SC2022
功能描述: Silicon NPN Power Transistors
文件大小: 56.72KB 共3页
简 介:Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2022
DESCRIPTION With TO-220C package High voltage APPLICATIONS Series regulator, switch, and general purpose applications
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION
Absolute maximum ratings(Ta=25℃)
SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 300 300 6 1 30 150 -50~150 UNIT V V V A W ℃ ℃
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
2SC2022
MAX
UNIT
V(BR)CEO
Collector-emitter breakdown voltage
IC=25mA ; IB=0
300
V
V(BR)CBO
Collector-base breakdown voltage
IC=1mA ; IE=0
300
V
V(BR)EBO
Emitter-base breakdown voltage
IE=1mA ; IC=0
6
V
VCEsat
Collector-emitter saturation voltage
IC=500mA; IB=100mA
1.0
V
ICBO
Collector cut-off current
VCB=300V ;IE=0
1.0
mA
IEBO
Emitter cut-off current
VEB=6V; IC=0
1.0
mA
hFE
DC current gain
IC=200m A ; VCE=4V
30
fT
Transition frequency
IC=100mA ; VCE=12V
10
MHz
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC2022
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
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