器件名称: 2SC2023
功能描述: Silicon NPN Power Transistors
文件大小: 56.9KB 共3页
简 介:Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2023
DESCRIPTION With TO-220C package High breakdown voltage APPLICATIONS Series regulator, switch, and general purpose applications
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-220) and symbol DESCRIPTION
Absolute maximum ratings(Ta=25℃)
SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 300 300 6 2 0.2 40 150 -50~150 UNIT V V V A A W ℃ ℃
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEsat ICBO IEBO hFE fT Cob PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Collector output capacitance CONDITIONS IC=25mA ; IB=0 IC=1A; IB=0.2A VCB=300V ;IE=0 VEB=6V; IC=0 IC=0.5 A ; VCE=4V IC=0.2A ; VCE=12V f=1MHz ; VCB=10V 30 10 75 MIN 300 TYP.
2SC2023
MAX
UNIT V
1.0 1.0 1.0
V mA mA
MHz pF
Switching times ton ts tf Turn-on time Storage time Fall time IC=1A, IB1=0.1A IB2=-0.2A; VCC=100V RL=100Ω 0.30 4.00 1.00 μs μs μs
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
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