器件名称: 2SC2026
功能描述: isc Silicon NPN RF Transistor
文件大小: 75.78KB 共2页
简 介:INCHANGE Semiconductor
isc RF Product Specification
isc Silicon NPN RF Transistor
2SC2026
DESCRIPTION Low Noise NF= 3.0dB TYP. @ f= 500MHz High Power Gain Gpe= 15dB TYP. @ f= 500MHz High Gain Bandwidth Product fT= 2.0GHz TYP.
APPLICATIONS Designed for use in low noise amplifiers in the VHF~UHF band.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL PARAMETER VALUE UNIT
VCBO
Collector-Base Voltage
30
V
VCEO
Collector-Emitter Voltage
14
V
VEBO
Emitter-Base Voltage
3
V
IC
Collector Current-Continuous
50
mA
PC
Collector Power Dissipation @TC=25℃
0.25
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc RF Product Specification
isc Silicon NPN RF Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN
2SC2026
TYP.
MAX
UNIT
ICBO
Collector Cutoff Current
VCB= 15V; IE= 0
0.1
μA
IEBO
Emitter Cutoff Current
VEB= 2V; IC= 0
0.1
μA
hFE
DC Current Gain
IC= 10mA ; VCE= 10V
25
200
fT
Current-Gain—Bandwidth Product
IC= 10mA ; VCE= 10V
15
2.0
GHz
COB
Output Capacitance
IE= 0 ; VCB= 10V; f= 1.0MHz
0.75
1.1
pF
Gpe
Power Gain
VCE= 10 V,IC= 10mA; f= 500MHz
13
15
dB
NF
Noise Figure
VCE= 10 V,IC= 3mA; f= 500MHz; RG= 50Ω
3
4
dB
isc Website：www.iscsemi.cn
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