器件名称: 2SC2027
功能描述: Silicon NPN Power Transistors
文件大小: 129.62KB 共3页
简 介:Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2027
DESCRIPTION With TO-3 package High voltage ,high speed APPLICATIONS For high voltage ,power switching and TV horizontal output applications
PINNING(see fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION
Absolute maximum ratings(Ta=℃)
SYMBOL VCBO VCEO VEBO IC ICM PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Total power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 1500 800 5 5 7.5 50 175 -65~200 UNIT V V V A A W ℃ ℃
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN
2SC2027
TYP.
MAX
UNIT
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.1A; IB=0
800
V
V(BR)EBO VCEsat
Emitter-base breakdown votage
IE=1mA; IC=0 IC=4.0 A;IB=1.3 A
5
V
Collector-emitter saturation voltage
5.0
V
VBEsat
Base-emitter saturation voltage
IC=4.0 A;IB=1.3 A
1.5
V μA μA
ICBO
Collector cut-off current
VCB=600V;IE=0
10
IEBO
Emitter cut-off current
VEB=5V; IC=0
10
hFE-1
DC current gain
IC=1A ; VCE=5V
8
36
hFE-2
DC current gain
IC=4.5A ; VCE=5V
2.25
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC2027
Fig.2 Outline dimensio……
