器件名称: 2SC2258
功能描述: Silicon NPN Power Transistors
文件大小: 172.27KB 共4页
简 介:JMnic
Product Specification
Silicon NPN Power Transistors
2SC2258
DESCRIPTION ·With TO-126 package ·High transition frequency fT ·High collector-emitter voltage VCEO APPLICATIONS ·For high breakdown voltage general amplification ·For video output amplification
PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base
·
Absolute maximum ratings(Ta=25℃)
SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector- emitter voltage Emitter-base voltage Collector current Collector current-peak CONDITIONS Open emitter Open base Open collector VALUE 250 250 7 0.1 0.15 1.2*1 PC Collector power dissipation TC=25℃ 4* Tj Tstg Junction temperature Storage temperature
2
UNIT V V V A A
W
150 -55～+150
℃ ℃
Note :*1: Without heat sink *2: With a 100 × 100 × 2 mm A1 heat sink
JMnic
Product Specification
Silicon NPN Power Transistors
2SC2258
CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL ICER V(BR)EBO VCEsat VBE hFE-1 hFE-2 COB fT PARAMETER Collector cutoff current Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter voltage DC current gain DC current gain Output capacitance Transition frequency CONDITIONS VCE=250V;RBE=100kΩ IE=0.1mA ;IC=0 IC=50mA ;IB=5m A IC=40mA ; VCE=20V IC=40mA ; VCE=20V IC=5mA ; VCE=50V IE=0; VCB=50V;f=1MHz IE=-10mA ; VCE=10V,f=200MHz 40 30 3 100 4.5 pF MHz 7 1.2 1.2 MIN TYP. MAX 100 UNIT μA V V V
2
JMnic
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC2258
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