器件名称: 2SC3011
功能描述: Silicon NPN Epitaxial
文件大小: 36.52KB 共1页
简 介:SMD Type
Silicon NPN Epitaxial 2SC3011
SOT-23
+0.1 2.9-0.1 +0.1 0.4-0.1
Transistors IC
Unit: mm
Features
+0.1 2.4-0.1
1
+0.1 0.95-0.1 +0.1 1.9-0.1
2
High fT : fT=6.5GHz
0.55
Low Noise Figure: NF=2.3dB(Typ.) f=1GHz
+0.1 1.3-0.1
High Gain :|S21e|2=12dB(TYP.)
0.4
3
+0.05 0.1-0.01
+0.1 0.97-0.1
1.Base 2.Emitter 3.collector
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC IE PC Tj Tstg Rating 20 7 3 30 10 150 125 -55 to +125 Unit V V V mA mA mW
Electrical Characteristics Ta = 25
Parameter Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Collector output capacitance Reverse Transfer Capacitance Input Capacitance Transition Frequency Insertion Gain Noise Figure Symbol ICBO IEBO Testconditons VCB = 10 V, IE = 0 VEB = 1.0 V, IC = 0 7 30 120 0.1 0.87 VCB = 5 V, IE = 0, f = 1 MHz VEB=0,IC=0,f=1MHZ VCE=5V,IC=10mA
2
Min
Typ
Max 1.0 1.0
V(BR)CEO IC = 0.5 mA, IB = 0 hFE VCE (sat) VBE (sat) Cob Cre Cib fT |S21e| NF VCE = 5 V, IC = 10 mA IC = 10 mA, IB = 1mA
+0.1 0.38-0.1
0-0.1
Unit ìA ìA V
V V 0.9 pF pF pF GHz dB dB
0.7 0.5 0.8 6.5 12 2.3
VCE=5V,IC=10mA,f=1GHZ VCE=5V,IC=5mA,f=1GHz
Marking
Marking MA
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1
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