器件名称: 2SC3026
功能描述: Silicon NPN Power Transistors
文件大小: 128.33KB 共3页
简 介:Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION With TO-3 package High breakdown voltage APPLICATIONS High voltage power switching character display horizontal deflection output PINNING(see Fig.2)
PIN 1 2 3 Base Emitter DESCRIPTION
2SC3026
Fig.1 simplified outline (TO-3) and symbol Collector
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL VCBO VCEO VEBO IC ICP PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE 1700 800 6 5 6 50 150 -45~150 UNIT V V V A A W ℃ ℃
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)EBO VCE(sat) VBE(sat) ICES PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current CONDITIONS IC=10mA ;RBE=∞ IE=10mA; IC=0 IC=5A; IB=1.25A IC=5A; IB=1.25A VCE=1700V; RBE=∞ MIN 800 6 TYP.
2SC3026
MAX
UNIT V V
2.0 1.5 0.5
V V mA
Switching times ts tf Storage time IC=5A; IB1=1A;IB2=-2.5A Fall time 0.5 μs 4.0 μs
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC3026
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
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