器件名称: 2SC3088
功能描述: Silicon NPN Power Transistors
文件大小: 153.79KB 共3页
简 介:Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3088
DESCRIPTION With TO-3PN package High breakdown voltage (VCBO≥800V) Fast switching speed Wide area of safe operation APPLICATIONS 500V/4A Switching Regulator Applications PINNING
PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION
Absolute maximum ratings (Ta=25℃)
SYMBOL VCBO VCEO VEBO IC ICP IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Ta=25℃ PC Collector power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 60 150 -55~150 ℃ ℃ PW≤300μs, Duty Cycle≤10% CONDITIONS Open emitter Open base Open collector VALUE 800 500 7 4 8 1.5 2.5 W UNIT V V V A A A
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE-1 hFE -2 COB fT PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=1mA ;RBE=∞ IC=1mA ;IE=0 IE=1mA ;IC=0 IC=1.5A; IB=0.3A IC=1.5A; IB=0.3A VCB=500V; IE=0 VEB=5V; IC=0 IC=0.3A ; VCE=5V IC=1.5A ; VCE=5V IE=0 ; VCB=10V;f=1MHz IC=0.3……
