器件名称: 2SC3089
功能描述: Silicon NPN Power Transistors
文件大小: 226.61KB 共4页
简 介:JMnic
Product Specification
Silicon NPN Power Transistors
2SC3089
DESCRIPTION ·With TO-3PN package ·High breakdown voltage (VCBO≥800V) ·Fast switching speed ·Wide ASO（Safe Operating Area） APPLICATIONS ·500V/7A Switching Regulator Applications
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION
Absolute maximum ratings (Ta=25℃)
SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Ta=25℃ PC Collector power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 80 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE 800 500 7 7 14 3 2.5 W UNIT V V V A A A
JMnic
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE-1 hFE -2 COB fT PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=5mA ;RBE=∞ IC=1mA ;IE=0 IE=1mA ;IC=0 IC=3A; IB=0.6A IC=3A ;IB=0.6A VCB=500V; IE=0 VEB=5V; IC=0 IC=0.6A ; VCE=5V IC=3A ; VCE=5V IE=0 ; VCB=10V;f=1MHz IC=0.6A ; VCE=10V 15 8 MIN 500 800 7
2SC3089
TYP.
MAX
UNIT V ……
