器件名称: 2SC3123
功能描述: Silicon NPN Epitaxial
文件大小: 35.05KB 共1页
简 介:SMD Type
Silicon NPN Epitaxial 2SC3123
SOT-23
+0.1 2.9-0.1 +0.1 0.4-0.1
Transistors IC
Unit: mm
+0.1 2.4-0.1
1
+0.1 0.95-0.1 +0.1 1.9-0.1
2
Low Reverse Transfer Capacitance : Cre=0.4F(TYP.)
0.55
High Conversion Gain :Gce=23dB(TYP.)
+0.1 1.3-0.1
Features
0.4
3
+0.05 0.1-0.01
+0.1 0.97-0.1
1.Base 2.Emitter 3.collector
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector Power Dissipation Junction temperature Storage temperature Range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 30 20 3 50 25 150 125 -55 to +125 Unit V V V mA mA mW
Electrical Characteristics Ta = 25
Parameter Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Reverse Transfer Capacitance Transition Frequency Conversion Gain Noise Figure Symbol ICBO IEBO Testconditons VCB = 25V, IE = 0 VEB = 3V, IC = 0 20 40 150 0.4 900 20 1400 23 3.8 5.5 300 0.5 pF MHz dB dB Min Typ Max 100 1000 Unit nA nA V
V(BR)CEO IC=1mA,IB=0 hFE Cre fT Gce NF VCE = 10 V, IC = 5mA VCB=10V,IE=0,f=1MHz VCE = 10 V, IC = 5mA VCC=12V,fL=260MHz,f=200MHZ
Marking
Marking HE
+0.1 0.38-0.1
0-0.1
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