器件名称: 2SC3125
功能描述: isc Silicon NPN RF Transistor
文件大小: 166.18KB 共4页
简 介:INCHANGE Semiconductor
isc RF Product Specification
isc Silicon NPN RF Transistor
2SC3125
DESCRIPTION Good Linearity of fT
APPLICATIONS Designed for TV Final Picture IF amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL PARAMETER VALUE UNIT
VCBO
Collector-Base Voltage
30
V
VCEO
Collector-Emitter Voltage
25
V
VEBO
Emitter-Base Voltage
4
V
IC
Collector Current-Continuous
50
mA
IB
B
Base Current-Continuous
25
mA
PC
Collector Power Dissipation @TC=25℃
0.15
W
TJ
Junction Temperature
125
℃
Tstg
Storage Temperature Range
-55~125
℃
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc RF Product Specification
isc Silicon NPN RF Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN
2SC3125
TYP.
MAX
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= 10mA ; IB= 0
25
V
ICBO
Collector Cutoff Current
VCB= 30V; IE= 0
0.1
μA
IEBO
Emitter Cutoff Current
VEB= 3V; IC= 0
0.1
μA
hFE
DC Current Gain
IC= 10mA ; VCE= 10V
20
200
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 15mA ; IB= 1.5mA
0.2
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= 15mA ; IB= 1.5mA
1.5
V
COB
Output Capacitance
IE= 0 ; VCB= 10V; f= 1.0MHz
1.1
1.6
pF
rbb’ CC
Base Time Constant
IC= 1mA ; VCB= 10V; f= 30MHz
25
ps
fT
Current-Gain—Bandwidth Product
IC= 10mA ; VCE= 10V
250
600
MHz
isc Website：www.iscsemi.cn
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INCHANGE Semiconductor
isc RF Product Specification
isc……
