器件名称: 2SC3127
功能描述: isc Silicon NPN RF Transistor
文件大小: 177.46KB 共6页
简 介:INCHANGE Semiconductor
isc RF Product Specification
isc Silicon NPN RF Transistor
2SC3127
DESCRIPTION Low Noise and High Gain NF = 2.2 dB TYP. @VCE = 5 V, IC = 5 mA, f = 900 MHz PG = 10.5 dB TYP. @VCE = 5 V, IC = 20 mA, f = 900 MHz
APPLICATIONS Designed for use in low-noise and small signal amplifiers from VHF ~ UHF band.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL PARAMETER VALUE UNIT
VCBO
Collector-Base Voltage
20
V
VCEO
Collector-Emitter Voltage
12
V
VEBO
Emitter-Base Voltage
3
V
IC
Collector Current-Continuous
50
mA
PC
Collector Power Dissipation @TC=25℃
0.15
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc RF Product Specification
isc Silicon NPN RF Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN
2SC3127
TYP.
MAX
UNIT
V(BR)CBO
Collector-Base Breakdown Voltage
IC= 10μA ; IE= 0
20
V
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= 1mA ; RBE= ∞
12
V
ICBO
Collector Cutoff Current
VCB= 12V; IE= 0
0.5
μA
IEBO
Emitter Cutoff Current
VEB= 3V; IC= 0
10
μA
hFE
DC Current Gain
IC= 20mA ; VCE= 5V
30
200
fT
Current-Gain—Bandwidth Product
IC= 20mA ; VCE= 5V
3.5
4.5
GHz
COB
Output Capacitance
IE= 0 ; VCB= 5V;f= 1.0MHz
0.9
1.5
pF
PG
Power Gain
IC= 20mA ; VCE= 5V;f= 900MHz
10.5
dB
NF
Noise Figure
IC= 5mA ; VCE= 5V;f= 900MHz
2.2
dB
isc Website：www.iscsemi.cn
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