器件名称: 2SJ0582
功能描述: Silicon P-channel power MOSFET
文件大小: 46.3KB 共2页
简 介:SMD Type
Silicon P-channel power MOSFET 2SJ0582
Transistors IC
Features
Avalanche energy capability guaranteed High-speed switching No secondary breakdown
+0.2 9.70-0.2
+0.15 6.50-0.15 +0.2 5.30-0.2
TO-252
+0.15 1.50-0.15
+0.1 2.30-0.1 +0.8 0.50-0.7
Unit: mm
+0.1 0.80-0.1
+0.15 0.50-0.15
0.127 max
+0.28 1.50-0.1
+0.25 2.65-0.1
+0.15 5.55-0.15
2.3
+0.15 4.60-0.15
+0.1 0.60-0.1
1. Gate 2. Drain 3. Source
Absolute Maximum Ratings Ta = 25
Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Peak Drain Current Avalanche Energy Capability * Power Dissipation TC = 25 Power Dissipation Channel Temperature Storage Temperature * L = 5 mH, IL = 2 A, 1 pulse Symbol VDSS VGSS ID IDP EAS PD PD Tch Tstg Rating -200 20 2 4 10 10 1 150 -55 to +150 Unit V V A A mJ W W
3.80
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1
SMD Type
2SJ0582
Electrical Characteristics Ta = 25
Parameter Drain Cut-off Current Gate Leakage Current Drain-Source Surrender Voltage Gate Threshold Voltage Drain to Source On-state Resistance Forward Transfer Admittance Diode Forward Voltage Input Capacitance Output Capacitance Feedback Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Thermal resistance (ch-c) Thermal resistance (ch-a) Symbol IDSS IGSS VDSS Vth Testconditons VDS = -160 V, VGS = 0 VGS = 20 V, VDS = 0
Transistors IC
Min
Typ
Max -10 10
Unit A A V
ID = -1 mA, VGS = 0 VDS = -25 V, ID = -1 mA
-200 -2 1.5 1 1.7 1.4 400 -4 2.0
V
RDS(on) VGS = -10 V, ID = -1.0 A Yfs VDF Ciss Cos……
