器件名称: 2SJ179
功能描述: MOS Fied Effect Transistor
文件大小: 45.05KB 共1页
简 介:SMD Type
MOS Fied Effect Transistor 2SJ179
SOT-89
MOSFET
Unit: mm
+0.1 1.50-0.1
Features
Directly driven by Ics having a 5V poer supply. Has low on-stage resistance RDS(on)=1.5 RDS(on)=1.0 MAX.@VGS=-4.0V,ID=-0.5A
+0.1 4.50-0.1 +0.1 1.80-0.1
+0.1 2.50-0.1
Bidircetional Zener Diode for protection is incorporated betweent Gate and Source Inductive loads can be driven without protective circuit thanks to
+0.1 3.00-0.1
+0.1 0.80-0.1
MAX.@VGS=-10V,ID=-0.5A
1
+0.1 0.48-0.1
2
3
+0.1 0.53-0.1 +0.1 0.44-0.1
2.60
+0.1 -0.1
+0.1 4.00-0.1
0.40
the and Source.
1. Source Base 1. 2. Drain Collector 2. 3. Gate Emiitter 3.
+0.1 -0.1
1 Gate
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter Drain to source voltage VGS=0 Gate to source voltage Drain current (DC) Drain current(pulse) * Power dissipation Channel temperature Storage temperature * PW 10 ms; d 50%. VDS=0 Symbol VDSS VGSS ID ID PD Tch Tstg Rating -30 20 1.5 3.0 2.0 150 -55 to +150 Unit V V A A W
Electrical Characteristics Ta = 25
Parameter Drain cut-off current Gate leakage current Gate cut-off voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Symbol IDSS IGSS Testconditons VDS=-30V,VGS=0 VGS= 20V,VDS=0 -1.0 0.4 0.8 0.4 210 VDS=-10V,VGS=0,f=1Mhz 130 3 35 VGS(on)=-10V,RG=10 0.5A RL=50 ,VDD=-25V,ID=70 380 200 1.5 1.0 pF pF pF ns ns ns ns -2.2 Min Typ Max -10 1.……
