器件名称: 2N2060A
功能描述: DUAL AMPLIFIER TRANSISTOR
文件大小: 19.29KB 共2页
简 介:LAB
MECHANICAL DATA Dimensions in mm (inches)
8.51 (0.335) 9.40 (0.370) 7.75 (0.305) 8.51 (0.335)
SEME
2N2060A
DUAL AMPLIFIER TRANSISTOR
1.02 (0.040) Max.
12.7 (0.500) Min.
6.10 (0.240) 6.60 (0.260)
Small Signal Dual Transistor in a TO–77 Hermetic Package.
0.41 (0.016) 0.53 (0.021) 5.08 (0.200) 2.54 (0.100)
2.54 (0.100)
3 2
4
5 6
0.74 (0.029) 1.14 (0.045)
1
45
0.71 (0.028) 0.86 (0.034)
TO–77 METAL PACKAGE
PIN 1 – Collector PIN 2 – Base PIN 3 – Emitter PIN 4 – Emitter PIN 5 – Base PIN 6 – Collector
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VCEO VCER VCBO VEBO IC TJ , Tstg PD PD Collector – Emitter Voltage Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current Operating and Storage Junction Temperature Range Total Device Dissipation Total Device Dissipation @ TA = 25°C Derate above 25°C @ TC = 25°C Derate above 25°C 60V 80V 100V 7V 500mA –65 to +200°C Per Side Total Device 0.5W 0.6W 2.86mW/°C 3.43mW/°C 1.5W 3.0W 8.61mW/°C 17.2mW/°C
Prelim. 4/96
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
LAB
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated)
Parameter
VCER(sus)* V(BR)CBO V(BR)EBO ICBO IEBO
SEME
2N2060A
Test Conditions
RBE 10W IB = 0 IE = 0 IC = 0 TA = 150°C IC = 0 VCE = 5V VCE = 5V VCE = 5V VCE = 5V IB = 5mA IB = 5mA VCE = 10V VCB = 10V VBE = 0.5V VCE = 5V VCB = 10V VCE = 5V
Min.
80 60 100 7
Typ.
Ma……
