器件名称: 9N60
功能描述: isc N-Channel Mosfet Transistor
文件大小: 63.55KB 共2页
简 介:INCHANGE Semiconductor
isc Product Specification
isc N-Channel Mosfet Transistor
9N60
FEATURES Drain Current –ID= 8.5A@ TC=25℃ Drain Source Voltage: VDSS= 600V(Min) Static Drain-Source On-Resistance : RDS(on) = 1.0Ω(Max) Avalanche Energy Specified Fast Switching Simple Drive Requirements
DESCRITION Designed for high efficiency switch mode power supply.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL VDSS VGS ID IDM PD Tj Tstg PARAMETER Drain-Source Voltage Gate-Source Voltage-Continuous Drain Current-Continuous Drain Current-Single Plused Total Dissipation @TC=25℃ Max. Operating Junction Temperature Storage Temperature VALUE 600 ±20 8.5 34 125 150 -55~150 UNIT V V A A W ℃ ℃
THERMAL CHARACTERISTICS
SYMBOL Rth j-c Rth j-a PARAMETER Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient MAX 1.0 62.5 UNIT ℃/W ℃/W
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc N-Channel Mosfet Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN
9N60
MAX
UNIT
V(BR)DSS
Drain-Source Breakdown Voltage
VGS= 0; ID= 0.25mA
600
V
VGS(th) RDS(on) IGSS
Gate Threshold Voltage
VDS= VGS; ID= 0.25mA
2
4
V Ω
Drain-Source On-Resistance
VGS= 10V; ID= 5A VGS= ±20V; VDS= 0
1.0 ±100
Gate-Body Leakage Current
nA μA
IDSS
Zero Gate Voltage Drain Current
VDS= 600V; VGS= 0
1
VSD
Forward On-Voltage
IS= 8.5A; VGS= 0
1.7
V
isc Website：www.iscsemi.cn
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