器件名称: 2N2219A_03
功能描述: HIGH SPEED SWITCHES
文件大小: 170.83KB 共7页
简 介:
2N2219A 2N2222A
HIGH SPEED SWITCHES
PRELIMINARY DATA
DESCRIPTION The 2N2219A and 2N2222A are silicon Planar Epitaxial NPN transistors in Jedec TO-39 (for 2N2219A) and in Jedec TO-18 (for 2N2222A) metal case. They are designed for high speed switching application at collector current up to 500mA, and feature useful current gain over a wide range of collector current, low leakage currents and low saturation voltage. TO-18 TO-39
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V CBO V CEO V EBO IC I CM P tot Parameter Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p < 5 ms) Total Dissipation at T amb ≤ 25 o C for 2N2219A for 2N2222A at T C ≤ 25 o C for 2N2219A for 2N2222A Storage Temperature Max. Operating Junction Temperature Value 75 40 6 0.6 0.8 0.8 0.5 3 1.8 -65 to 175 175 Unit V V V A A W W W W
o o
T stg Tj
C C 1/7
February 2003
2N2219A / 2N2222A
THERMAL DATA
TO-39 R thj-case R thj-amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max 50 187.5 TO-18 83.3 300
o o
C/W C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol I CBO I CEX I BEX I EBO V (BR)CBO Parameter Collector Cut-off Current (I E = 0) Collector Cut-off Current (V BE = -3V) Base Cut-off Current (V BE = -3V) Emitter Cut-off Current (I C = 0) Collector-Base Breakdown Voltage (I E = 0) Test Conditions V CB = 60 V V CB = 60 V V CE = 60 V V CE = 6……
