器件名称: 2N3055
功能描述: Complementary power transistors
文件大小: 92.97KB 共7页
简 介:2N3055 MJ2955
Complementary power transistors
Features
■ ■
Low collector-emitter saturation voltage Complementary NPN - PNP transistors
Applications
■ ■
General purpose Audio Amplifier
1 2
TO-3
Description
The devices are manufactured in epitaxial-base planar technology and are suitable for audio, power linear and switching applications.
Figure 1.
Internal schematic diagram
Table 1.
Device summary
Marking 2N3055 TO-3 MJ2955 MJ2955 tray Package Packaging
Order code 2N3055
January 2008
.
Rev 7
1/7
www.st.com 7
Absolute maximun rating
2N3055 MJ2955
1
Table 2.
Symbol
Absolute maximun rating
Absolute maximum rating
Parameter NPN PNP VCBO VCER VCEO VEBO IC IB PTOT Tstg TJ Collector-emitter voltage (IE = 0) Collector-emitter voltage (RBE = 100 ) Collector-emitter voltage (IB = 0) Collector-base voltage (IC = 0) Collector current Base current Total dissipation at Tc ≤25°C Storage temperature Max. operating junction temperature
For PNP type voltage and current values are negative
Value 2N3055 MJ2955 100 70 60 7 15 7 115 -65 to 200 200
Unit
V V V V A A W °C °C
Note:
2/7
2N3055 MJ2955
Electrical characteristics
2
Electrical characteristics
(Tcase = 25°C; unless otherwise specified)
Table 3.
Symbol ICEX ICEO IEBO
Electrical characteristics
Parameter Collector cut-off current (V BE = -1.5 V) Collector cut-off current (IB = 0) Emitter cut-off current (IC = 0) Test conditions VCE = 100 V VCE = 100 V VCE = 30 V VEB = 7 V IC = 200 mA IC = 200 mA IC = 4 A IC = 10 ……