器件名称: 2N2222AUB
功能描述: Type 2N2222AUB Geometry 0400 Polarity NPN
文件大小: 47.08KB 共2页
简 介:Data Sheet No. 2N2222AUB
Type 2N2222AUB
Geometry 0400 Polarity NPN Qual Level: JAN - JANS
Features: General-purpose transistor for switching and amplifier applicatons. Housed in a cersot case. Also available in chip form using the 0400 chip geometry. The Min and Max limits shown are per MIL-PRF-19500/255 which Semicoa meets in all cases. The Typ values are actual batch averages for Semicoa. Radiation Graphs available.
Generic Part Number: 2N2222A
REF: MIL-PRF-19500/255
Cersot
Maximum Ratings
TC = 25oC unless otherwise specified
Rating
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, Continuous Operating Junction Temperature Storage Temperature
Symbol
VCEO VCBO VEBO IC TJ TSTG
Rating
50 75 6.0 800 -65 to +200 -65 to +200
Unit
V V V mA
o
C C
o
Data Sheet No. 2N2222AUB
Electrical Characteristics
TC = 25oC unless otherwise specified
OFF Characteristics
Collector-Base Breakdown Voltage IC = 10 A Collector-Emitter Breakdown Voltage IC = 10 mA Emitter-Base Breakdown Voltage IE = 10 A Collector-Emitter Cutoff Current VCE = 50 V Collector-Base Cutoff Current VCB = 60 V Emitter-Base Cutoff Current VEB = 4 V
Symbol
V(BR)CBO V(BR)CEO V(BR)EBO ICES ICBO1 IEBO
Min
75 50 6.0 -------
Typ
120 65 7.0 3.0 2.0 0.5
Max
------50 10 10
Unit
V V V nA nA nA
ON Characteristics
DC Current Gain IC = 100 A, VCE = 10 V IC = 1.0 mA, VCE = 10 V IC = 10 mA, VCE = 10 V IC = 150 mA, VCE = 10 V (pulse test) IC = 500 mA, VCE = 10 V (pulse test) C……
