器件名称: 2N2222AWS-1
功能描述: SWITCHING TRANSISTOR NPN SILICON
文件大小: 44.34KB 共2页
简 介:2N2222A DIE
A Microsemi Company
580 Pleasant St. Watertown, MA 02172
Phone: 617-924-9280 Fax: 617-924-1235
DIE SPECIFICATION SWITCHING TRANSISTOR NPN SILICON
FEATURES: n ELECTRICAL PERFORMANCE I.A.W. MIL-PRF-19500/255 n AVAILABLE IN WAFER OR CHIP FORM FOR HYBRID APPLICATIONS n GENERAL PURPOSE-HIGH SPEED SWITCHING APPLICATIONS n LOW VCE(sat): .3V @ IC = 150 mAdc
PHYSICAL DIMENSIONS
Absolute Maximum Ratings:
Symbol Vceo Vcbo Vebo Ic Tj, Tstg Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current- Continuous Operating Junction & Storage Temperature Range Limit 50 75 6.0 800 -65 to +200 Unit Vdc Vdc Vdc mAdc °C
Packaging Options: W: Wafer (100% probed) U: Wafer (sample probed) D: Chip (Waffle Pack) B: Chip (Vial) V: Chip (Waffle Pack, 100% visually inspected) X: Other Metallization Options: Standard: Al Top Dash 1: Al Top / Au Backside (No Dash #) / TiPdAg Backside
Processing Options: Standard: Capable of JANTXV applications (No Suffix) Suffix C: Commercial Suffix S: Capable of S-Level equivalent applications ORDERING INFORMATION: PART #: 2N2222A_ _ - _ First Suffix Letter: Packaging Option Second Suffix Letter: Processing Option Dash #: Metallization Option
Sertech reserves the right to make changes to any product design, specification, or other information at any time without prior notice. Data Sheet, Die, 2N2222A MSW Rev. - 4/15/98 MSC0949.PDF 1
Electrical Characteristics @ Tj = 25 ° C
Symbol Parameter Conditions Min Max Uni……
