器件名称: BU102
功能描述: Silicon NPN Power Transistors
文件大小: 106.79KB 共3页
简 介:SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BU102
DESCRIPTION With TO-3 package VCEO(sus)=150V (min) APPLICATIONS Designed for horizontal deflection output stage of CTV receivers
PINNING(see fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION
Absolute maximum ratings(Ta= )
SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collectorl power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 400 150 6 7 100 150 -55~150 UNIT V V V A W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN TYP.
BU102
SYMBOL
MAX
UNIT
VCEO(SUS)
Collector-emitter sustaining voltage
IC=100mA; IB=0
150
V
V(BR)EBO
Emitter-base breakdown votage
IE=1mA; IC=0
6
V
V(BR)CBO
Collector-base breakdown votage
IC=1mA; IE=0
400
V
VCEsat
Collector-emitter saturation voltage
IC=5 A;IB=1.0 A
2.0
V
VBEsat
Base-emitter saturation voltage
IC=5 A;IB=1.0 A
2.5
V
ICBO
Collector cut-off current
VCB=400V; IE=0
0.1
mA
ICEO
Collector cut-off current
VCE=100V; IE=0
1.0
mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
0.1
mA
hFE
DC current gain
IC=1A ; VCE=5V
30
120
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
BU1……
