器件名称: BU104
功能描述: Silicon NPN Power Transistor
文件大小: 205.83KB 共2页
简 介:INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BU104
DESCRIPTION Collector-Emitter Breakdown Voltage: V(BR)CEO= 150V(Min.) Low Collector Saturation Voltage: VCE(sat)= 2.5V(Max.)@ IC= 7A APPLICATIONS Designed for use in horizontal deflexion output stage of B/W TV receivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL VCBO VCEO VCEX VEBO IC ICM IB
B
PARAMETER Collector-Base Voltage Collector-Emitter Voltage
VALUE 400
UNIT V
Collector-Emitter Voltage VBE= -5V Emitter-Base Voltage
Collector Current-Continuous
w w w
s c s .i
150 400 10 7 15 3 85 200 -65~200
n c . i m e
V V V A A A
Collector Current-Peak Repetitive Base Current-Continuous Collector Power Dissipation @ TC= 25℃ Junction Temperature Storage Temperature Range
PC TJ Tstg
W ℃ ℃
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 2.0 UNIT ℃/W
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
BU104
MAX
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= 50mA; IB= 0
150
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 7A; IB= 1A
B
2.5
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= 7A; IB= 1A
B
2.5
V
ICBO
Collector Cutoff Current
VCB= 250V; IE= 0
0.5
mA
ICEX
Collector Cutoff Current
IEBO
Emitter Cutoff Current
hFE
DC Current Gain
fT
Current-Gain—B……
