器件名称: BUZ102SE3045A
功能描述: SIPMOS Power Transistor
文件大小: 139.4KB 共8页
简 介:BUZ 102S
SIPMOS Power Transistor
Features N channel
Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current
VDS ID
55 52
V A
Enhancement mode
RDS(on) 0.018
Avalanche rated dv/dt rated 175 C operating temperature
Type BUZ102S BUZ102S E3045A BUZ102S E3045
Package
Ordering Code
Packaging Tube Tape and Reel Tube
Pin 1 G
Pin 2 D
Pin 3 S
P-TO220-3-1 Q67040-S4011-A2 P-TO263-3-2 Q67040-S4011-A6 P-TO263-3-2 Q67040-S4011-A5
Maximum Ratings, at Tj = 25 C unless unless specified Parameter Symbol Continuous drain current
Value 52 37 208 245 12 6
Unit A
ID
TC = 25 C TC = 100 C
Pulsed drain current
IDpulse EAS EAR
dv/dt
TC = 25 C
Avalanche energy, single pulse mJ
ID = 52 A, VDD = 25 V, RGS = 25
Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt kV/s
IS = 52 A, VDS = 40 V, di/dt = 200 A/s, Tjmax = 175 C
Gate source voltage Power dissipation
VGS Ptot Tj , Tstg
±20 120 -55... +175 55/175/56
V W C
TC = 25 C
Operating and storage temperature IEC climatic category; DIN IEC 68-1
Data Book
1
05.99
BUZ 102S
Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leded SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area1) Symbol min. Values typ. max. 1.25 62 62 40 K/W Unit
RthJC RthJA RthJA
-
Electrical Characteristics, at T j = 25 C, unless otherwise specified Parameter Static Characteristics Drain- source breakdown volt……
