器件名称: 2N2857
功能描述: RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
文件大小: 114.37KB 共4页
简 介:140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855
2N2857
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Features
Silicon NPN, To-72 packaged UHF Transistor 1.6 GHz Current-Gain Bandwidth Product @ 5mA IC
2
Maximum Unilateral Gain = 13 dB (typ) @ 500 MHz
1 4
3
1. Emitter 2. Base 3. Collector 4. Case
TO-72
DESCRIPTION:
The 2N2857 is a silicon NPN transistor, designed for UHF equipment. Applications include low noise amplifier; oscillator, and mixer applications.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25 ° C)
Symbol Parameter Value Unit
VCEO VCBO VEBO PD IC
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Maximum Device Dissipation Collector Current
15 30 2.5 200 40
V V V mW mA
Thermal Data
RTH(J-C) Thermal Resistance Junction-case 0.88 C/mW
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2N2857
ELECTRICAL SPECIFICATIONS (Tcase = 25 ° C) STATIC
Symbol BVCEO BVCBO BVEBO ICBO HFE Test Conditions Min. Collector-Emitter Breakdown Voltage (IC = 3.0 mAdc, IB = 0) Collector-Base Breakdown Voltage (IC=1.0 Adc, IE=0) Emitter-Base Breakdown Voltage (IE = 10 Adc, IC = 0) Collector Cutoff Current (VCE = 15 V, IE = 0 V) DC Current Gain (IC = 3.0 mAdc, VCE = 1.0 V) 15 30 2.5 30 Value Typ. Max. .01 150 Unit V V V A
DYNAMIC
Symbol fT NF Test Conditions Current-Gain - Ba……
