器件名称: M29W800DB45M6E
功能描述: 8-Mbit (1 Mbit x 8 or 512 Kbits x 16, boot block) 3 V supply flash memory
文件大小: 1103.95KB 共52页
简 介:M29W800DT M29W800DB
8-Mbit (1 Mbit x 8 or 512 Kbits x 16, boot block) 3 V supply flash memory
Features
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Supply voltage – VCC = 2.7 V to 3.6 V for program, erase and read Access times: 45, 70, 90 ns Programming time – 10 s per byte/word typical 19 memory blocks – 1 boot block (top or bottom location) – 2 parameter and 16 main blocks Program/erase controller – Embedded byte/word program algorithms Erase suspend and resume modes – Read and program another block during erase suspend Unlock bypass program command – Faster production/batch programming Temporary block unprotection mode Common flash interface – 64-bit security code Low power consumption – Standby and automatic standby 100,000 program/erase cycles per block Electronic signature – Manufacturer code: 0020h – Top device code M29W800DT: 22D7h – Bottom device code M29W800DB: 225Bh TFBGA48 (ZE) 6 x 8 mm TSOP48 (N) 12 x 20 mm
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SO44 (M)
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FBGA
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March 2008
Rev 10
1/52
www.numonyx.com 1
Contents
M29W800DT, M29W800DB
Contents
1 2 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Signal descriptions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 2.10 2.11 2.12 Address inputs (A0-A18) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Data inputs/outputs (DQ0-DQ7) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Data ……
