器件名称: 2SC2120
功能描述: Silicon NPN Epitaxial Type (PCT process)
文件大小: 313.32KB 共3页
简 介:2SC2120
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC2120
Audio Power Amplifier Applications
High hFE: hFE (1) = 100~320 1 watts amplifier applications. Complementary to 2SA950 Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 35 30 5 800 160 600 150 55~150 Unit V V V mA mA mW °C °C
JEDEC
TO-92
Note: Using continuously under heavy loads (e.g. the application of high JEITA SC-43 temperature/current/voltage and the significant change in TOSHIBA 2-5F1B temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. Weight: 0.21 g (typ.) operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage Symbol ICBO IEBO V (BR) CEO hFE (1) DC current gain (Note) hFE (2) Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collecto……
