器件名称: NCE75H21T
功能描述: NCE N-Channel Enhancement Mode Power MOSFET
文件大小: 354.5KB 共7页
简 介:Pb Free Product
http://www.ncepower.com
NCE75H21T
NCE N-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The NCE75H21T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in Automotive applications and a wide variety of other applications.
GENERAL FEATURES
● VDSS =75V,ID =210A RDS(ON) < 4m @ VGS=10V ● Good stability and uniformity with high EAS ● Special process technology for high ESD capability ● High density cell design for ultra low Rdson ● Fully characterized Avalanche voltage and current ● Excellent package for good heat dissipation Schematic diagram
Application
● ● ● Automotive applications Hard Switched and High Frequency Circuits Uninterruptible Power Supply Marking and pin Assignment
100% UIS TESTED! 100% ΔVds TESTED!
TO-247
top view
Package Marking And Ordering Information
Device Marking NCE75H21T Device NCE75H21T Device Package TO-247 Reel Size Tape width Quantity -
Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDSS Gate-Source Voltage VGS
Drain Current-Continuous Drain Current-Continuous(TC=100℃) Pulsed Drain Current Maximum Power Dissipation Derating factor
Limit
75 ±20 210 150 850 480 3.2
Unit
V V A A A W W/℃
ID
ID (100℃)
IDM PD
Wuxi NCE Power Semiconductor Co., Ltd
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Pb Free Product
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Single pulse avalanche energy (Note 3) Peak Diode Recovery dv/dt (Note 4) Operating Junction and Storage Temperature Range……
